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GW quasiparticle band structures of stibnite, antimonselite, bismuthinite, and guanajuatite

机译:辉锑矿,锑矿,双亚菱铁矿和胍辉石的GW准带结构

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摘要

We present first-principles calculations of the quasiparticle band structures of four isostructural semiconducting metal chalcogenides A 2B3 (with A = Sb, Bi and B = S, Se) of the stibnite family within the G0W0 approach. We perform extensive convergence tests and identify a sensitivity of the quasiparticle corrections to the structural parameters and to the semicore d electrons. Our calculations indicate that all four chalcogenides exhibit direct band gaps, if we exclude some indirect transitions marginally below the direct gap. Relativistic spin-orbit effects are evaluated for the Kohn-Sham band structures, and included as scissor corrections in the quasiparticle band gaps. Our calculated band gaps are 1.5 eV (Sb2S3), 1.3 eV (Sb2Se 3), 1.4 eV (Bi2S3), and 0.9 eV (Bi 2Se3). By comparing our calculated gaps with the ideal Shockley-Queisser value we find that all four chalcogenides are promising as light sensitizers for nanostructured photovoltaics. © 2013 American Physical Society.
机译:我们在G0W0方法中介绍了辉锑矿族的四个同构半导电金属硫属元素化物A 2B3(A = Sb,Bi和B = S,Se)的准粒子能带结构的第一性原理计算。我们进行了广泛的收敛测试,并确定了准粒子校正对结构参数和半核d电子的敏感性。我们的计算表明,如果我们将一些间接跃迁略微低于直接间隙,则所有四个硫族化物都表现出直接带隙。对Kohn-Sham能带结构评估了相对论自旋轨道效应,并将其作为剪刀校正包括在准粒子带隙中。我们计算出的带隙为1.5 eV(Sb2S3),1.3 eV(Sb2Se 3),1.4 eV(Bi2S3)和0.9 eV(Bi 2Se3)。通过将我们计算的缺口与理想的Shockley-Queisser值进行比较,我们发现所有四种硫族化物都有望用作纳米结构光伏的光敏剂。 ©2013美国物理学会。

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